Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority to US08/829,004 priority Critical patent/US5896058A/en Application filed by Cherry Semiconductor Corp filed Critical Cherry Semiconductor Corp Assigned to CHERRY SEMICONDUCTOR CORPORATION reassignment CHERRY SEMICONDUCTOR CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Original Assignee Cherry Semiconductor Corp Priority date (The priority date is an assumption and is not a legal conclusion.

Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Lifetime Application number US08/829,004 Inventor Christopher John Sanzo Jeffrey Gordon Dumas Stephen Saunders Yole Current Assignee (The listed assignees may be inaccurate. Google Patents High speed totem pole FET driver circuit with differential cross conduction preventionĭownload PDF Info Publication number US5896058A US5896058A US08/829,004 US82900497A US5896058A US 5896058 A US5896058 A US 5896058A US 82900497 A US82900497 A US 82900497A US 5896058 A US5896058 A US 5896058A Authority US United States Prior art keywords node voltage circuit switching output Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US5896058A - High speed totem pole FET driver circuit with differential cross conduction prevention A mirror clamp function and under voltage lockout function (UVLO) are built in.ġch configuration, 3,750Vrms isolated type Gate Driver, can be used for switching devices with current source pins.US5896058A - High speed totem pole FET driver circuit with differential cross conduction prevention High side/low side driver with high withstand voltage (1200V). The low Vf type FRD is suitable for rectification, and achieves low loss even at high current. Improve fast switching capability than RFN series. Lower Vf than RSV series, but ultra fast switching capability Trench-gate SiC MOSFET with low on-resistance (50% reduction) compared to conventional products. It supports 750 V withstand voltage, ensuring a higher operating margin than conventional products, and can be used safely. Enhanced low on-resistance enable best in class performance.

Totem pole transistor driver